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| BUF410A High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements 3 2 1 Applications Switch mode power supplies Motor control TO-247 Description The BUF410A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BUF410A Package TO-247 Packaging Tube Order code BUF410A March 2008 Rev 3 1/9 www.st.com 9 Electrical ratings BUF410A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage (V BE = -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 C Storage temperature Max. operating junction temperature Value 1000 450 7 15 30 3 4.5 125 -65 to 150 150 Unit V V V A A A A W C C Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 1 Unit C/W 2/9 BUF410A Electrical characteristics 2 Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Collector cut-off current (RBE = 10 ) Collector cut-off current (VBE = -1.5 V) Test conditions VCE = 1000 V VCE = 1000 V VCE = 1000 V VCE = 1000 V TC = 100 C TC = 100 C Min. Typ. Max. 0.2 1 0.2 1 Unit mA mA mA mA ICER ICEV IEBO Emitter cut-off current VEB = 5 V (IC = 0) IC = 200 mA 450 1 mA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) V IE = 50 mA IC = 5 A IB = 0.5 A IB = 0.5 A TC = 100 C 7 0.8 2.8 0.5 TC = 100 C 0.9 1.5 1.1 1.5 2 V V V V V V V V V VCE(sat) (1) Collector-emitter saturation voltage IC = 5 A IC = 10 A IB = 2 A IC = 10 A IB = 2 A IC = 5 A IB = 0.5 A VBE(sat) (1) Base-emitter saturation voltage IC = 5 A IB = 0.5 A TC = 100 C IC = 10 A IB = 2 A TC = 100 C IC = 10 A IB = 2 A dic / dt Rate of rise on-state collector current VCC = 300 V R C = 0 tp = 3 s IB1 = 0.75 A TC = 25 C IB1 = 0.75 A IB1 = 3 A TC = 100 C TC = 100 C R C = 60 TC = 25 C TC = 100 C R C = 60 TC = 25 C TC = 100 C VCC = 50 V RBB = 1.2 IB1 = 0.5 A 45 100 60 A/s A/s A/s VCE(dyn) Collector-emitter dynamic voltage (3 s) Collector-emitter dynamic voltage (5 s) Inductive load Storage time Fall time Cross over time VCC = 300 V IB1 = 0.75 A IB1 = 0.75 A VCC = 300 V IB1 = 0.75 A IB1 = 0.75 A IC = 5 A VBB = -5 V VClamp = 400 V L = 0.5 mH 2.1 8 V V VCE(dyn) 1.1 4 V V ts tf tc 0.8 0.05 0.08 s s s 3/9 Electrical characteristics Table 4. Symbol BUF410A Electrical characteristics (continued) Parameter Inductive load Storage time Fall time Cross over time IC = 5 A VBB = -5 V VClamp = 400 V L = 0.5 mH IC = 5 A Test conditions VCC = 50 V RBB = 1.2 IB1 = 0.5 A TC = 100 C VCC = 50 V RBB = 1.2 L = 0.5 mH 500 V 1.8 0.1 0.18 s s s Min. Typ. Max. Unit ts tf tc VCEW Maximum collector emitter voltage without snubber VBB = -5 V IB1 = 0.5 A TC = 125 C ts tf tc ts tf tc Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time IC = 5 A VBB = 0 VClamp = 400 V L = 0.5 mH IC = 5 A VBB = 0 VClamp = 400 V L = 0.5 mH IC = 5 A VCC = 50 V RBB = 0.3 IB1 = 0.5 A VCC = 50 V RBB = 0.3 IB1 = 0.5 A TC = 100 C VCC = 50 V RBB = 0.3 L = 0.5 mH 500 V 3 0.15 0.25 s s s 1.5 0.04 0.07 s s s VCEW Maximum collector emitter voltage without snubber VBB = 0 IB1 = 0.5 A TC = 125 C ts tf tc Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time IC = 10 A VBB = -5 V VClamp = 400 V L = 0.25 mH IC = 10 A VBB = -5 V VClamp = 400 V L = 0.25 mH IC = 15 A V CC = 50 V RBB = 1.2 IB1 = 2 A V CC = 50 V RBB = 1.2 IB1 = 2 A TC = 100 C V CC = 50 V RBB = 1.2 L = 0.1 mH 400 V 3.2 0.12 0.3 s s s 1.9 0.06 0.12 s s s ts tf tc VCEW Maximum collector emitter voltage without snubber VBB = -5 V IB1 = 3 A TC = 125 C 1. Pulse duration = 300 s, duty cycle 1.5% 4/9 BUF410A Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Forward biased safe operating area Figure 3. Reverse biased safe operating area 2.2 Test circuit Figure 4. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data BUF410A 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 BUF410A Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/9 Revision history BUF410A 4 Revision history Table 5. Date 18-Mar-2002 13-Mar-2008 Document revision history Revision 2 3 Package change from TO-218 to TO-247. Changes 8/9 BUF410A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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